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Applications
- as CVDs, ALDs, ALO, HARP, BPSG, PE CVD, some etches-Syndion/metal/etches using PFCs
- Installed before or after vacuum pumps to remove and collect powder, particles, un-reacted precursors, substances, etc.
- Different internal filtering and removing mechanisms of materials depending on precursors, materials such as particles & powder, foreline drops, etc.
- Semiconductor processes such
Characteristic
- Removes by-products and residual gases generated during the processes
- Longer MTBFs of vacuum pumps
- No sudden failures of pumps
- Minimum or no service and maintenance at foreline, exhaust lines and scrubber
- No or less heating of exhaust line
- Less clogging at abatement
- Saving energy at foreline, exhaust pipe and abatements
Specification
Category |
Details |
|
|---|---|---|
General |
Model |
MC |
Material |
SUS304 |
|
Size (liter) |
10 (Other sizes available depending on service interval or usage) |
|
Main Functions |
· Optimized designs with processes for removing materials, un-reacted precursors, powder, particles, etc. before and after pump · Maximum efficiency in capturing/removing foreign substances via optimized flow and removing mechanisms · Designs with good conductance over the use · Easy to maintain service at fabs (< 30 mins from start to finish) |
|
Main Applications |
Semiconductor processes using TEOS, BPSG, PSG, HARP, SiONx, SiNx, F CVD, PE CVD, DIFF, etc. |
|
